@PwrElectronics posts an excellent article about Tagore Technology's introduction of 650V GaN Power IC, TP44200NM, comprising GaN Power FET with monolithically integrated driver.
The word is out!
https://t.co/DWbHFARZmC
@everything_PE_ features Tagore Technology's 650V GaN Power IC, TP44200NM, comprising GaN Power FET with monolithically integrated driver https://t.co/TU2QkjnigR
@EEWorldOnline features a wonderful article about Tagore Technology's introduction of 650V GaN Power IC, TP44200NM, comprising GaN Power FET with monolithically integrated driver. https://t.co/qrnsy19POH
Microwave Journal features Tagore’s participation at IMS 2021, Atlanta, June 8 - 9, 2021. At the in-person event, Tagore will highlight the launch of GaAs low noise amplifiers, GaN RF switches as well as GaN power amplifier devices at booth #1830 https://t.co/2fntDLrsI5
Visit @Tagore at booth 1830 at IMS2021 Atlanta, U.S. in-person tradeshow, June 8 -9. We’ll be showcasing our new #GaAs LNA and driver amplifiers, #GaN RF switches and #GaN power amplifier devices. If you can’t make the event, catch up with us later in June at the virtual IMS2021.
@Tagore’s technical experts will present at #APEC 2021: T39 DC-DC Converter Applications: #Comparison between Quasi-Resonant and Active Clamp Flyback topologies for GaN-based 65W Wall Charger Applications.
On your 5G MIMO front end, join the trend. HIgh Power, small GaN switches with microamps current drain. See TS7224FK as example at https://t.co/esf7yB1x9e