Innoscience

Innoscience is the largest 8-inch Integrated Device Manufacturer (IDM) fully focused on GaN technology in the world.

[Innoscience @InnoscienceTech]

Our INN100W135A-Q and the ultra-compact INN100W800A-Q devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to 1/5 of those of silicon solutions. https://t.co/Se2zVahyoD

[Innoscience @InnoscienceTech]

Our new 100-150V top-side cooled GaN power transistors reduce junction temperatures by 25%. With their excellent electrical properties and ultra-miniaturized packaging, our medium and low-voltage GaN parts have found adoption in a variety of applications https://t.co/hZffx41pOS.

[Innoscience @InnoscienceTech]

Let's start the year with our GaN portfolio, covering LV, MV, and HV GaN available in discrete and integrated (SolidGaN) solutions. We also offer our bi-directional VGaN, which replaces two Si MOSFETs in BMS applications, and our GaN gate drivers. https://t.co/kuJQlfr5UU

[Innoscience @InnoscienceTech]

This piece explores how GaN evolved into a complete solution for a wide range of applications. Once only considered suitable for specific applications, our GaN devices are found in everything from compact mobile chargers to LED drivers and power supplies. https://t.co/5TrtpjV5xX

[Innoscience @InnoscienceTech]

Our proprietary 8-inch GaN-on-Si epi-buffer technology is optimized for both high-voltage (HV) and low-voltage (LV) devices. By controlling our in-house epi-technology, we can quickly adapt the epi-process to meet specific needs or applications.
https://t.co/7fMA5DWpPJ

[Innoscience @InnoscienceTech]

Wishing all our partners, customers, and team members a joyful holiday season! 🎄 As we reflect on a year of growth and innovation, we're grateful for the continued trust in our GaN technology, which is revolutionizing power electronics!

[Innoscience @InnoscienceTech]

Our INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13mm x 1.63mm and 0.9mm x 0.9mm respectively, offer significant advantages in terms of size and power efficiency. Click here for more information: https://t.co/Se2zVahyoD

[Innoscience @InnoscienceTech]

This 250W GaN Charger teardown shows how our 650V/80mΩ devices deliver high performance and compact design.
Click here to learn more: https://t.co/uD3iOWB9kO

[Innoscience @InnoscienceTech]

Let's revisit this article from Power Electronics World: 'GaN Blossoms into Full Technology Solutions,' which highlights the advances of GaN in various applications, from datacenters to LED drivers and more. Enjoy reading it! Read it here: https://t.co/5bVc9mbVGZ

[Innoscience @InnoscienceTech]

We’ve introduced four new GaN-on-Silicon enhancement mode HEMTs in our En-FCQFN top-side cooling package, offering significant improvements in thermal performance.

Read the full article here: https://t.co/5VXFF9Ml5t

[Innoscience @InnoscienceTech]

Today’s the day! Dr. Denis Marcon will be presenting “Price competitive GaN power devices are the technology of choice for high-efficiency, compact and cost-effective power systems” at Bodo’s Wide Bandgap (WBG) Event at 10:15 AM.

[Innoscience @InnoscienceTech]

Our new Battery Management System (BMS) is designed specifically for electric three-wheelers and e-bikes, powered by our 100 V GaN devices. The INV100FQ030A VGaN IC supports two-way pass-through, two-way cut-off and no-reverse-recovery modes of operation. https://t.co/dn31n8qRyt

[Innoscience @InnoscienceTech]

On December 4th, Dr. Denis Marcon will present “Price competitive GaN power devices are the technology of choice for high-efficiency, compact and cost-effective power systems” at Bodo’s Wide Bandgap (WBG) Event.
Click here for more information: https://t.co/fT9zTTvFUJ

[Innoscience @InnoscienceTech]

We will be presenting at Bodo’s Wide Bandgap Event on December 4th. Dr. Denis Marcon, General Manager of Innoscience Europe, will discuss how GaN power devices outperform traditional silicon, with a Figure of Merit (Ron x Qg) that is ten times better.
https://t.co/fT9zTTvFUJ

[Innoscience @InnoscienceTech]

This white paper explores how Class-D audio amplifiers are achieving new performance standards with our Gallium Nitride (GaN) technology. Our GaN devices enhance efficiency, reduce size and weight, and deliver superior output quality in Class-D amplifiers.
https://t.co/0auYJWKj91

[Innoscience @InnoscienceTech]

It’s happening today! Join Dr. Denis Marcon at 10:40 AM at the Power Electronics Forum during electronica for his presentation: "Enabling Smaller, More Efficient and Cheaper Power Converter Systems with Price-Competitive GaN Power Devices." See you there!

[Innoscience @InnoscienceTech]

Our INN100W135A-Q and smaller package INN100W800A-Q are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions.
https://t.co/Q2T5bBdM0Y

[Innoscience @InnoscienceTech]

Our new battery management system (BMS) solutions are designed to meet the growing demand for eco-friendly travel, mobile energy storage, and compact power applications.
Click here to read the full article: https://t.co/ANn4sbHEz3

[Innoscience @InnoscienceTech]

Dr. Jan Šonský will give a tutorial at the ECPE (European Center for Power Electronics) in Manchester on October 19th and 20th: "Wide Bandgap User Training - GaN-based Power Electronics | ECPE Tutorial." More information can be found here: https://t.co/lLBQgMswC6

[Semiconductor Today @Semiconductor_T]

Innoscience expands 100V automotive-grade GaN device portfolio.
@InnoscienceTech

https://t.co/pYEzRxSa9a