Highlighting some of our most-cited articles from the past years on #GaN#Semiconductor devices:
"DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy "
https://t.co/kWc03QX0gH
Highlighting some of our most-cited articles from the past years on #GaN#Semiconductor devices:
"Positive temperature dependence of time-dependent breakdown of GaN-on-Si Emode HEMTs under positive gate stress " with insights to improve your reliability!
https://t.co/C3rs34Hzfa
Highlighting some of our most-cited articles from the past years on #GaN#Semiconductor devices:
"Vertical breakdown of GaN on Si due to V-pits"
This article is proof of the close collaboration between all our partners!
https://t.co/3jbWBIeqvV
Highlighting some of our most-cited articles from the past years on #GaN#Semiconductor devices:
"μs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate"
Learn more on this evaluation aproach!
https://t.co/NSrPMZoHv4
Highlighting some of our most-cited articles from the past years on #GaN#Semiconductor devices:
"GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap"
https://t.co/pUqp4hnq0N
Highlighting some of our most-cited contributions for the #GaN#semiconductor#transistors:
Chapter 8 in "The 2018 GaN power electronics roadmap" on reliable, normally-off devices!
https://t.co/O3NqZn5PxB
Highlighting some of our most-cited articles from the past years on #GaN#Semiconductor devices:
"On the origin of the leakage current in p-gate AlGaN/GaN HEMTs"
The first author, Arno Stockman, recently defended his PhD, congradulations!
https://t.co/ODy0TQ9qYE
Highlighting some of our most-cited articles from the past years on #GaN#Semiconductor devices:
"Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors"
Learn how the holes are trapped at the sidewalls of your transistor!
https://t.co/ii1ryW1DEn
Best insights arrive at the end of a project! Read ours in this Nature's scentific report publication from Sven and his co-authors:
"The impact of dislocations on AlGaN/#GaN Schottky diodes and on gate failure of high electron mobility #transistors"
https://t.co/uzCONEcpLY
We've updated publication list on our website! Feel curious to dive into more than 50 publications investigating #GaN#Semiconductor
https://t.co/Z2m97L12Cq
Our latest article was selected as a featured article for Journal of Applied Physics!
A great illustration of the excellence achieved within our project.
https://t.co/ACSgQESzPr
And this was our summer school on #GaN#semiconductor devices! Couldn't make it in Ghent? Keep an eye on our YouTube channel for recordings in the near future!
We're all convinced that #GaN and #SiC#semiconductors power devices are unique. But what are the concerns of the industry? Dr. Kriegel from Siemens shows his expectations
What will be the Application playground of #SiC; what of #GaN? "Like choosing the world's best professional sport person" - Dr. Ritter from Bosch gives an application-perspective
"How do we creatie high-reliable #GaN # power devices" Yesterday, our #summerschool was closed with an important question. Today, Prof. Meneghesso starts our second day with answers!